Emergence of very broad infrared absorption band by hyperdoping of silicon with chalcogens

with chalcogens Ikurou Umezu, Jeffrey M. Warrender, Supakit Charnvanichborikarn, Atsushi Kohno, James S. Williams, Malek Tabbal, Dimitris G. Papazoglou, Xi-Cheng Zhang, and Michael J. Aziz Department of Physics, Konan University, Kobe 658-8501, Japan U.S. Army ARDEC–Ben et Laboratories, Watervliet, New York 12189, USA Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia Department of Applied Physics, Fukuoka University, Fukuoka 814-0180, Japan Department of Physics, American University of Beirut, Beirut 1107 2020, Lebanon Institute of Electronic Structure and Laser, Foundation for Research and Technology Hellas, P.O. Box 1527, 71110 Heraklion, Greece Materials Science and Technology Department, University of Crete, P.O. Box 2208, 71003 Heraklion, Greece Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, USA Harvard School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138, USA